1N6483-E3/97 Prissætning (USD) [1025340stk Lager]
- 1 pcs$0.03807
- 10,000 pcs$0.03788
- Varenummer:
- 1N6483-E3/97
- Fabrikant:
- Vishay Semiconductor Diodes Division
- Detaljeret beskrivelse:
- DIODE GEN PURP 800V 1A DO213AB. Rectifiers 800 Volt 1.0 Amp 30 Amp IFSM
- Producentens standard ledetid:
- På lager
- Opbevaringstid:
- Et år
- Chip fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåde:
- Familiekategorier:
- KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Transistorer - Bipolar (BJT) - RF, Transistorer - FET'er, MOSFET'er - Arrays, Transistorer - IGBT'er - Arrays, Thyristorer - DIAC'er, SIDAC'er, Dioder - Zener - Single, Dioder - RF, Thyristorer - SCR'er and Dioder - Variabel Kapacitans (Varicaps, Varactors) ...
- Konkurrencefordel:
- Vi er specialiserede i Vishay Semiconductor Diodes Division 1N6483-E3/97 elektroniske komponenter. 1N6483-E3/97 kan sendes inden for 24 timer efter bestilling. Hvis du har krav til 1N6483-E3/97, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
1N6483-E3/97 Produktegenskaber
Varenummer :
1N6483-E3/97
Fabrikant :
Vishay Semiconductor Diodes Division
Beskrivelse :
DIODE GEN PURP 800V 1A DO213AB
Serie :
SUPERECTIFIER®
Del Status :
Active
Diodetype :
Standard
Spænding - DC-omvendt (Vr) (Max) :
800V
Nuværende - Gennemsnitlig Rectified (Io) :
1A
Spænding - Videresend (Vf) (Max) @ Hvis :
1.1V @ 1A
Hastighed :
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
-
Nuværende - Reverse Lækage @ Vr :
10µA @ 800V
Kapacitans @ Vr, F :
8pF @ 4V, 1MHz
Monteringstype :
Surface Mount
Pakke / tilfælde :
DO-213AB, MELF (Glass)
Leverandør Device Package :
DO-213AB
Driftstemperatur - Junction :
-65°C ~ 175°C
Seneste nyt
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