Beskrivelse :
GANFET N-CH 650V 36A TO247
Del Status :
Not For New Designs
Teknologi :
GaNFET (Gallium Nitride)
Afløb til Source Voltage (VDSS) :
650V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
36A (Tc)
Drevspænding (Maks. Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
60 mOhm @ 22A, 8V
Vgs (th) (Max) @ Id :
2.6V @ 700µA
Gate Charge (Qg) (Max) @ Vgs :
42nC @ 8V
Inputkapacitans (Ciss) (Max) @ Vds :
2200pF @ 400V
Power Dissipation (Max) :
125W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Through Hole
Leverandør Device Package :
TO-247-3
Pakke / tilfælde :
TO-247-3