Vishay Semiconductor Diodes Division - FESB16AT-E3/81

KEY Part #: K6456210

FESB16AT-E3/81 Prissætning (USD) [84873stk Lager]

  • 1 pcs$0.46070
  • 800 pcs$0.42754

Varenummer:
FESB16AT-E3/81
Fabrikant:
Vishay Semiconductor Diodes Division
Detaljeret beskrivelse:
DIODE GEN PURP 50V 16A TO263AB. Rectifiers 50 Volt 16 Amp 35ns Single
Producentens standard ledetid:
På lager
Opbevaringstid:
Et år
Chip fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåde:
Familiekategorier:
KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Thyristorer - SCR'er, Transistorer - Programmerbar Unijunction, Transistorer - FET'er, MOSFET'er - RF, Transistorer - IGBT'er - Single, Transistorer - Bipolar (BJT) - Single, Pre-Biased, Transistorer - JFET'er, Transistorer - Bipolar (BJT) - Arrays, Pre-Biased and Dioder - Zener - Arrays ...
Konkurrencefordel:
Vi er specialiserede i Vishay Semiconductor Diodes Division FESB16AT-E3/81 elektroniske komponenter. FESB16AT-E3/81 kan sendes inden for 24 timer efter bestilling. Hvis du har krav til FESB16AT-E3/81, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FESB16AT-E3/81 Produktegenskaber

Varenummer : FESB16AT-E3/81
Fabrikant : Vishay Semiconductor Diodes Division
Beskrivelse : DIODE GEN PURP 50V 16A TO263AB
Serie : -
Del Status : Active
Diodetype : Standard
Spænding - DC-omvendt (Vr) (Max) : 50V
Nuværende - Gennemsnitlig Rectified (Io) : 16A
Spænding - Videresend (Vf) (Max) @ Hvis : 975mV @ 16A
Hastighed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 35ns
Nuværende - Reverse Lækage @ Vr : 10µA @ 50V
Kapacitans @ Vr, F : 175pF @ 4V, 1MHz
Monteringstype : Surface Mount
Pakke / tilfælde : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Leverandør Device Package : TO-263AB
Driftstemperatur - Junction : -65°C ~ 150°C

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