Varenummer :
IPI076N12N3GAKSA1
Fabrikant :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 120V 100A TO262-3
Teknologi :
MOSFET (Metal Oxide)
Afløb til Source Voltage (VDSS) :
120V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
100A (Tc)
Drevspænding (Maks. Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
7.6 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs :
101nC @ 10V
Inputkapacitans (Ciss) (Max) @ Vds :
6640pF @ 60V
Power Dissipation (Max) :
188W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Through Hole
Leverandør Device Package :
PG-TO262-3
Pakke / tilfælde :
TO-262-3 Long Leads, I²Pak, TO-262AA