Varenummer :
IPS65R1K0CEAKMA1
Fabrikant :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 650V 4.3A TO-251-3
Del Status :
Not For New Designs
Teknologi :
MOSFET (Metal Oxide)
Afløb til Source Voltage (VDSS) :
650V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
4.3A (Tc)
Drevspænding (Maks. Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1 Ohm @ 1.5A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs :
15.3nC @ 10V
Inputkapacitans (Ciss) (Max) @ Vds :
328pF @ 100V
Power Dissipation (Max) :
37W (Tc)
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandør Device Package :
TO-251
Pakke / tilfælde :
TO-251-3 Stub Leads, IPak