Varenummer :
BSO615NGHUMA1
Fabrikant :
Infineon Technologies
Beskrivelse :
MOSFET 2N-CH 60V 2.6A 8SOIC
FET Type :
2 N-Channel (Dual)
FET-funktion :
Logic Level Gate
Afløb til Source Voltage (VDSS) :
60V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
2.6A
Rds On (Max) @ Id, Vgs :
150 mOhm @ 2.6A, 4.5V
Vgs (th) (Max) @ Id :
2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Inputkapacitans (Ciss) (Max) @ Vds :
380pF @ 25V
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Pakke / tilfælde :
8-SOIC (0.154", 3.90mm Width)
Leverandør Device Package :
PG-DSO-8