1N5820HB0G Prissætning (USD) [736098stk Lager]
- 1 pcs$0.05025
- Varenummer:
- 1N5820HB0G
- Fabrikant:
- Taiwan Semiconductor Corporation
- Detaljeret beskrivelse:
- DIODE SCHOTTKY 20V 3A DO201AD.
- Producentens standard ledetid:
- På lager
- Opbevaringstid:
- Et år
- Chip fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåde:
- Familiekategorier:
- KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Dioder - RF, Transistorer - Bipolar (BJT) - Arrays, Pre-Biased, Transistorer - IGBT'er - Moduler, Transistorer - Bipolar (BJT) - Arrays, Dioder - Zener - Single, Transistorer - Bipolar (BJT) - Single, Pre-Biased, Transistorer - Bipolar (BJT) - Single and Dioder - Bridge Rectifiers ...
- Konkurrencefordel:
- Vi er specialiserede i Taiwan Semiconductor Corporation 1N5820HB0G elektroniske komponenter. 1N5820HB0G kan sendes inden for 24 timer efter bestilling. Hvis du har krav til 1N5820HB0G, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
1N5820HB0G Produktegenskaber
Varenummer :
1N5820HB0G
Fabrikant :
Taiwan Semiconductor Corporation
Beskrivelse :
DIODE SCHOTTKY 20V 3A DO201AD
Serie :
Automotive, AEC-Q101
Del Status :
Active
Diodetype :
Schottky
Spænding - DC-omvendt (Vr) (Max) :
20V
Nuværende - Gennemsnitlig Rectified (Io) :
3A
Spænding - Videresend (Vf) (Max) @ Hvis :
475mV @ 3A
Hastighed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
-
Nuværende - Reverse Lækage @ Vr :
500µA @ 20V
Kapacitans @ Vr, F :
200pF @ 4V, 1MHz
Monteringstype :
Through Hole
Pakke / tilfælde :
DO-201AD, Axial
Leverandør Device Package :
DO-201AD
Driftstemperatur - Junction :
-55°C ~ 125°C
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