EGL34BHE3_A/I Prissætning (USD) [732237stk Lager]
- 1 pcs$0.05051
- Varenummer:
- EGL34BHE3_A/I
- Fabrikant:
- Vishay Semiconductor Diodes Division
- Detaljeret beskrivelse:
- DIODE GEN PURP 100V 500MA DO213. Rectifiers 0.5A,100V,50NS AEC-Q101 Qualified
- Producentens standard ledetid:
- På lager
- Opbevaringstid:
- Et år
- Chip fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåde:
- Familiekategorier:
- KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Transistorer - Bipolar (BJT) - Single, Pre-Biased, Thyristorer - SCR'er, Transistorer - IGBT'er - Single, Thyristorer - SCR'er - Moduler, Thyristorer - DIAC'er, SIDAC'er, Dioder - Rectifiers - Single, Power Driver Modules and Transistorer - Bipolar (BJT) - Arrays, Pre-Biased ...
- Konkurrencefordel:
- Vi er specialiserede i Vishay Semiconductor Diodes Division EGL34BHE3_A/I elektroniske komponenter. EGL34BHE3_A/I kan sendes inden for 24 timer efter bestilling. Hvis du har krav til EGL34BHE3_A/I, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
EGL34BHE3_A/I Produktegenskaber
Varenummer :
EGL34BHE3_A/I
Fabrikant :
Vishay Semiconductor Diodes Division
Beskrivelse :
DIODE GEN PURP 100V 500MA DO213
Serie :
Automotive, AEC-Q101, Superectifier®
Del Status :
Active
Diodetype :
Standard
Spænding - DC-omvendt (Vr) (Max) :
100V
Nuværende - Gennemsnitlig Rectified (Io) :
500mA
Spænding - Videresend (Vf) (Max) @ Hvis :
1.25V @ 500mA
Hastighed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
50ns
Nuværende - Reverse Lækage @ Vr :
5µA @ 100V
Kapacitans @ Vr, F :
7pF @ 4V, 1MHz
Monteringstype :
Surface Mount
Pakke / tilfælde :
DO-213AA (Glass)
Leverandør Device Package :
DO-213AA (GL34)
Driftstemperatur - Junction :
-65°C ~ 175°C
Seneste nyt
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