Varenummer :
TK31V60W5,LVQ
Fabrikant :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N -CH 600V 30.8A DFN
Teknologi :
MOSFET (Metal Oxide)
Afløb til Source Voltage (VDSS) :
600V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
30.8A (Ta)
Drevspænding (Maks. Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
109 mOhm @ 15.4A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs :
105nC @ 10V
Inputkapacitans (Ciss) (Max) @ Vds :
3000pF @ 300V
Power Dissipation (Max) :
240W (Tc)
Driftstemperatur :
150°C (TA)
Monteringstype :
Surface Mount
Leverandør Device Package :
4-DFN-EP (8x8)
Pakke / tilfælde :
4-VSFN Exposed Pad