Beskrivelse :
GAN TRANS SYMMETRICAL HALF BRIDG
FET Type :
2 N-Channel (Half Bridge)
FET-funktion :
GaNFET (Gallium Nitride)
Afløb til Source Voltage (VDSS) :
60V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
23A
Rds On (Max) @ Id, Vgs :
4.4 mOhm @ 20A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs :
6.8nC @ 5V
Inputkapacitans (Ciss) (Max) @ Vds :
830pF @ 30V
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandør Device Package :
Die