Beskrivelse :
GAN TRANS ASYMMETRICAL HALF BRID
FET Type :
2 N-Channel (Half Bridge)
FET-funktion :
GaNFET (Gallium Nitride)
Afløb til Source Voltage (VDSS) :
30V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
16A (Ta)
Rds On (Max) @ Id, Vgs :
19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs :
2.2nC @ 5V, 5.7nC @ 5V
Inputkapacitans (Ciss) (Max) @ Vds :
230pF @ 15V, 590pF @ 15V
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandør Device Package :
Die