Varenummer :
SIZ200DT-T1-GE3
Fabrikant :
Vishay Siliconix
Beskrivelse :
MOSFET N-CH DUAL 30V
Serie :
TrenchFET® Gen IV
FET Type :
2 N-Channel (Dual)
Afløb til Source Voltage (VDSS) :
30V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs :
5.5 mOhm @ 10A, 10V, 5.8 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
28nC @ 10V, 30nC @ 10V
Inputkapacitans (Ciss) (Max) @ Vds :
1510pF @ 15V, 1600pF @ 15V
Strøm - Max :
4.3W (Ta), 33W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Pakke / tilfælde :
8-PowerWDFN
Leverandør Device Package :
8-PowerPair® (3.3x3.3)