ESH1BHE3_A/I Prissætning (USD) [678920stk Lager]
- 1 pcs$0.05448
- Varenummer:
- ESH1BHE3_A/I
- Fabrikant:
- Vishay Semiconductor Diodes Division
- Detaljeret beskrivelse:
- DIODE GEN PURP 100V 1A DO214AC. Rectifiers 1A, 100V, 25NS, SMA AEC-Q101 Qualified
- Producentens standard ledetid:
- På lager
- Opbevaringstid:
- Et år
- Chip fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåde:
- Familiekategorier:
- KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Dioder - Zener - Arrays, Dioder - RF, Dioder - Variabel Kapacitans (Varicaps, Varactors), Transistorer - Programmerbar Unijunction, Transistorer - Bipolar (BJT) - Single, Pre-Biased, Transistorer - Bipolar (BJT) - Arrays, Pre-Biased, Transistorer - JFET'er and Thyristorer - SCR'er - Moduler ...
- Konkurrencefordel:
- Vi er specialiserede i Vishay Semiconductor Diodes Division ESH1BHE3_A/I elektroniske komponenter. ESH1BHE3_A/I kan sendes inden for 24 timer efter bestilling. Hvis du har krav til ESH1BHE3_A/I, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
ESH1BHE3_A/I Produktegenskaber
Varenummer :
ESH1BHE3_A/I
Fabrikant :
Vishay Semiconductor Diodes Division
Beskrivelse :
DIODE GEN PURP 100V 1A DO214AC
Serie :
Automotive, AEC-Q101
Del Status :
Active
Diodetype :
Standard
Spænding - DC-omvendt (Vr) (Max) :
100V
Nuværende - Gennemsnitlig Rectified (Io) :
1A
Spænding - Videresend (Vf) (Max) @ Hvis :
900mV @ 1A
Hastighed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
25ns
Nuværende - Reverse Lækage @ Vr :
1µA @ 100V
Kapacitans @ Vr, F :
25pF @ 4V, 1MHz
Monteringstype :
Surface Mount
Pakke / tilfælde :
DO-214AC, SMA
Leverandør Device Package :
DO-214AC (SMA)
Driftstemperatur - Junction :
-55°C ~ 175°C
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