IDP30E120XKSA1 Prissætning (USD) [32584stk Lager]
- 1 pcs$0.87801
- 10 pcs$0.78854
- 100 pcs$0.63380
- 500 pcs$0.52073
- 1,000 pcs$0.43146
- Varenummer:
- IDP30E120XKSA1
- Fabrikant:
- Infineon Technologies
- Detaljeret beskrivelse:
- DIODE GEN PURP 1.2KV 50A TO220-2.
- Producentens standard ledetid:
- På lager
- Opbevaringstid:
- Et år
- Chip fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåde:
- Familiekategorier:
- KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Transistorer - Bipolar (BJT) - RF, Dioder - Bridge Rectifiers, Transistorer - FET'er, MOSFET'er - RF, Transistorer - FET'er, MOSFET'er - Single, Power Driver Modules, Transistorer - Bipolar (BJT) - Single, Pre-Biased, Transistorer - JFET'er and Dioder - Rectifiers - Arrays ...
- Konkurrencefordel:
- Vi er specialiserede i Infineon Technologies IDP30E120XKSA1 elektroniske komponenter. IDP30E120XKSA1 kan sendes inden for 24 timer efter bestilling. Hvis du har krav til IDP30E120XKSA1, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
IDP30E120XKSA1 Produktegenskaber
Varenummer :
IDP30E120XKSA1
Fabrikant :
Infineon Technologies
Beskrivelse :
DIODE GEN PURP 1.2KV 50A TO220-2
Serie :
-
Del Status :
Active
Diodetype :
Standard
Spænding - DC-omvendt (Vr) (Max) :
1200V
Nuværende - Gennemsnitlig Rectified (Io) :
50A (DC)
Spænding - Videresend (Vf) (Max) @ Hvis :
2.15V @ 30A
Hastighed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
243ns
Nuværende - Reverse Lækage @ Vr :
100µA @ 1200V
Kapacitans @ Vr, F :
-
Monteringstype :
Through Hole
Pakke / tilfælde :
TO-220-2
Leverandør Device Package :
PG-TO220-2-2
Driftstemperatur - Junction :
-55°C ~ 150°C
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