Diodes Incorporated - DMN3022LDG-13

KEY Part #: K6522281

DMN3022LDG-13 Prissætning (USD) [210932stk Lager]

1 pcs$0.17535

Varenummer:: DMN3022LDG-13

Fabrikant:: Diodes Incorporated

Detaljeret beskrivelse:: MOSFET BVDSS 25V-30V POWERDI333.

Producentens standard ledetid:: På lager

Opbevaringstid:: Et år

Chip fra:: Hong Kong

RoHS:

Betalingsmetode:

Forsendelsesmåde:

Familiekategorier:: KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Transistorer - JFET'er, Dioder - Zener - Single, Thyristorer - TRIACs, Dioder - RF, Transistorer - Bipolar (BJT) - RF, Transistorer - FET'er, MOSFET'er - RF, Transistorer - Programmerbar Unijunction and Transistorer - IGBT'er - Moduler ...

Konkurrencefordel:: Vi er specialiserede i Diodes Incorporated DMN3022LDG-13 elektroniske komponenter. DMN3022LDG-13 kan sendes inden for 24 timer efter bestilling. Hvis du har krav til DMN3022LDG-13, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

DMN3022LDG-13 Produktegenskaber

Varenummer : DMN3022LDG-13

Fabrikant : Diodes Incorporated

Beskrivelse : MOSFET BVDSS 25V-30V POWERDI333

Serie : -

Del Status : Active

FET Type : 2 N-Channel (Dual)

FET-funktion : Standard

Afløb til Source Voltage (VDSS) : 30V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 7.6A (Ta), 15A (Tc)

Rds On (Max) @ Id, Vgs : 22 mOhm @ 10A, 5V, 8 mOhm @ 10A, 5V

Vgs (th) (Max) @ Id : 2.1V @ 250µA, 1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 3.7nC @ 4.5V, 8nC @ 4.5V

Inputkapacitans (Ciss) (Max) @ Vds : 481pF @ 15V, 996pF @ 15V

Strøm - Max : 1.96W (Ta)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Pakke / tilfælde : 8-PowerLDFN

Leverandør Device Package : PowerDI3333-8

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