Varenummer :
IPB60R199CPATMA1
Fabrikant :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 650V 16A TO-263
Del Status :
Not For New Designs
Teknologi :
MOSFET (Metal Oxide)
Afløb til Source Voltage (VDSS) :
650V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
16A (Tc)
Drevspænding (Maks. Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
199 mOhm @ 9.9A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 660µA
Gate Charge (Qg) (Max) @ Vgs :
43nC @ 10V
Inputkapacitans (Ciss) (Max) @ Vds :
1520pF @ 100V
Power Dissipation (Max) :
139W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandør Device Package :
PG-TO263-3-2
Pakke / tilfælde :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB