1N4150W-G3-18 Prissætning (USD) [2134704stk Lager]
- 1 pcs$0.01733
- 10,000 pcs$0.01603
- Varenummer:
- 1N4150W-G3-18
- Fabrikant:
- Vishay Semiconductor Diodes Division
- Detaljeret beskrivelse:
- DIODE GEN PURP 50V 200MA SOD123. Diodes - General Purpose, Power, Switching 50 Volt 500mA 4ns
- Producentens standard ledetid:
- På lager
- Opbevaringstid:
- Et år
- Chip fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåde:
- Familiekategorier:
- KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Dioder - Variabel Kapacitans (Varicaps, Varactors), Dioder - RF, Transistorer - IGBT'er - Arrays, Transistorer - Særligt formål, Thyristorer - TRIACs, Transistorer - FET'er, MOSFET'er - Arrays, Power Driver Modules and Transistorer - Bipolar (BJT) - Arrays ...
- Konkurrencefordel:
- Vi er specialiserede i Vishay Semiconductor Diodes Division 1N4150W-G3-18 elektroniske komponenter. 1N4150W-G3-18 kan sendes inden for 24 timer efter bestilling. Hvis du har krav til 1N4150W-G3-18, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
1N4150W-G3-18 Produktegenskaber
Varenummer :
1N4150W-G3-18
Fabrikant :
Vishay Semiconductor Diodes Division
Beskrivelse :
DIODE GEN PURP 50V 200MA SOD123
Serie :
-
Del Status :
Active
Diodetype :
Standard
Spænding - DC-omvendt (Vr) (Max) :
50V
Nuværende - Gennemsnitlig Rectified (Io) :
200mA
Spænding - Videresend (Vf) (Max) @ Hvis :
1V @ 200mA
Hastighed :
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) :
4ns
Nuværende - Reverse Lækage @ Vr :
100nA @ 50V
Kapacitans @ Vr, F :
2.5pF @ 0V, 1MHz
Monteringstype :
Surface Mount
Pakke / tilfælde :
SOD-123
Leverandør Device Package :
SOD-123
Driftstemperatur - Junction :
-55°C ~ 150°C
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