Fabrikant :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N-CH 650V 5.8A DPAK
Teknologi :
MOSFET (Metal Oxide)
Afløb til Source Voltage (VDSS) :
650V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
5.8A (Ta)
Drevspænding (Maks. Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.05 Ohm @ 2.9A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 180µA
Gate Charge (Qg) (Max) @ Vgs :
11nC @ 10V
Inputkapacitans (Ciss) (Max) @ Vds :
390pF @ 300V
Power Dissipation (Max) :
60W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Surface Mount
Leverandør Device Package :
DPAK
Pakke / tilfælde :
TO-252-3, DPak (2 Leads + Tab), SC-63