Fabrikant :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 650V 800MA TO251-3
Teknologi :
MOSFET (Metal Oxide)
Afløb til Source Voltage (VDSS) :
650V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
800mA (Tc)
Drevspænding (Maks. Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
6 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
5nC @ 10V
Inputkapacitans (Ciss) (Max) @ Vds :
100pF @ 25V
Power Dissipation (Max) :
11W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandør Device Package :
PG-TO251-3
Pakke / tilfælde :
TO-251-3 Stub Leads, IPak