NS8KTHE3_A/P Prissætning (USD) [3177stk Lager]
- 1,000 pcs$0.26162
- Varenummer:
- NS8KTHE3_A/P
- Fabrikant:
- Vishay Semiconductor Diodes Division
- Detaljeret beskrivelse:
- DIODE GEN PURP 800V 8A TO220AC.
- Producentens standard ledetid:
- På lager
- Opbevaringstid:
- Et år
- Chip fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåde:
- Familiekategorier:
- KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Dioder - Rectifiers - Single, Thyristorer - DIAC'er, SIDAC'er, Transistorer - Bipolar (BJT) - RF, Thyristorer - SCR'er - Moduler, Transistorer - FET'er, MOSFET'er - Single, Transistorer - Særligt formål, Dioder - Zener - Arrays and Dioder - Variabel Kapacitans (Varicaps, Varactors) ...
- Konkurrencefordel:
- Vi er specialiserede i Vishay Semiconductor Diodes Division NS8KTHE3_A/P elektroniske komponenter. NS8KTHE3_A/P kan sendes inden for 24 timer efter bestilling. Hvis du har krav til NS8KTHE3_A/P, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
NS8KTHE3_A/P Produktegenskaber
Varenummer :
NS8KTHE3_A/P
Fabrikant :
Vishay Semiconductor Diodes Division
Beskrivelse :
DIODE GEN PURP 800V 8A TO220AC
Serie :
Automotive, AEC-Q101
Del Status :
Obsolete
Diodetype :
Standard
Spænding - DC-omvendt (Vr) (Max) :
800V
Nuværende - Gennemsnitlig Rectified (Io) :
8A
Spænding - Videresend (Vf) (Max) @ Hvis :
1.1V @ 8A
Hastighed :
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
-
Nuværende - Reverse Lækage @ Vr :
10µA @ 800V
Kapacitans @ Vr, F :
55pF @ 4V, 1MHz
Monteringstype :
Through Hole
Pakke / tilfælde :
TO-220-2
Leverandør Device Package :
TO-220AC
Driftstemperatur - Junction :
-55°C ~ 150°C
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