RJK6002DPH-E0#T2 Prissætning (USD) [182616stk Lager]
- 1 pcs$0.22391
- 3,000 pcs$0.22280
- Varenummer:
- RJK6002DPH-E0#T2
- Fabrikant:
- Renesas Electronics America
- Detaljeret beskrivelse:
- MOSFET N-CH 600V 2A TO251.
- Producentens standard ledetid:
- På lager
- Opbevaringstid:
- Et år
- Chip fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåde:
- Familiekategorier:
- KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Thyristorer - SCR'er - Moduler, Transistorer - IGBT'er - Moduler, Transistorer - Bipolar (BJT) - Arrays, Transistorer - Bipolar (BJT) - Arrays, Pre-Biased, Transistorer - FET'er, MOSFET'er - Single, Transistorer - Bipolar (BJT) - Single, Dioder - Rectifiers - Single and Transistorer - Bipolar (BJT) - Single, Pre-Biased ...
- Konkurrencefordel:
- Vi er specialiserede i Renesas Electronics America RJK6002DPH-E0#T2 elektroniske komponenter. RJK6002DPH-E0#T2 kan sendes inden for 24 timer efter bestilling. Hvis du har krav til RJK6002DPH-E0#T2, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
RJK6002DPH-E0#T2 Produktegenskaber
Varenummer :
RJK6002DPH-E0#T2
Fabrikant :
Renesas Electronics America
Beskrivelse :
MOSFET N-CH 600V 2A TO251
Serie :
-
Del Status :
Last Time Buy
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Afløb til Source Voltage (VDSS) :
600V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
2A (Ta)
Drevspænding (Maks. Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
6.8 Ohm @ 1A, 10V
Vgs (th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
6.2nC @ 10V
Vgs (Max) :
±30V
Inputkapacitans (Ciss) (Max) @ Vds :
165pF @ 25V
FET-funktion :
-
Power Dissipation (Max) :
30W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Through Hole
Leverandør Device Package :
TO-251
Pakke / tilfælde :
TO-251-3 Short Leads, IPak, TO-251AA
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