TK56A12N1,S4X Prissætning (USD) [44747stk Lager]
- 1 pcs$0.96163
- 50 pcs$0.77608
- 100 pcs$0.69848
- 500 pcs$0.54327
- 1,000 pcs$0.45014
- Varenummer:
- TK56A12N1,S4X
- Fabrikant:
- Toshiba Semiconductor and Storage
- Detaljeret beskrivelse:
- MOSFET N-CH 120V 56A TO-220.
- Producentens standard ledetid:
- På lager
- Opbevaringstid:
- Et år
- Chip fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåde:
- Familiekategorier:
- KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Transistorer - IGBT'er - Single, Dioder - RF, Transistorer - Bipolar (BJT) - Single, Pre-Biased, Power Driver Modules, Transistorer - Bipolar (BJT) - Arrays, Transistorer - Bipolar (BJT) - Single, Dioder - Rectifiers - Single and Dioder - Zener - Single ...
- Konkurrencefordel:
- Vi er specialiserede i Toshiba Semiconductor and Storage TK56A12N1,S4X elektroniske komponenter. TK56A12N1,S4X kan sendes inden for 24 timer efter bestilling. Hvis du har krav til TK56A12N1,S4X, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
TK56A12N1,S4X Produktegenskaber
Varenummer :
TK56A12N1,S4X
Fabrikant :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N-CH 120V 56A TO-220
Serie :
U-MOSVIII-H
Del Status :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Afløb til Source Voltage (VDSS) :
120V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
56A (Tc)
Drevspænding (Maks. Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
7.5 mOhm @ 28A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
69nC @ 10V
Vgs (Max) :
±20V
Inputkapacitans (Ciss) (Max) @ Vds :
4200pF @ 60V
FET-funktion :
-
Power Dissipation (Max) :
45W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Through Hole
Leverandør Device Package :
TO-220SIS
Pakke / tilfælde :
TO-220-3 Full Pack
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