FESB16DT-E3/81 Prissætning (USD) [84873stk Lager]
- 1 pcs$0.46070
- 800 pcs$0.42754
- Varenummer:
- FESB16DT-E3/81
- Fabrikant:
- Vishay Semiconductor Diodes Division
- Detaljeret beskrivelse:
- DIODE GEN PURP 200V 16A TO263AB. Rectifiers 16 Amp 200 Volt 35ns
- Producentens standard ledetid:
- På lager
- Opbevaringstid:
- Et år
- Chip fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåde:
- Familiekategorier:
- KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Transistorer - Bipolar (BJT) - RF, Transistorer - FET'er, MOSFET'er - RF, Transistorer - IGBT'er - Arrays, Thyristorer - DIAC'er, SIDAC'er, Dioder - Rectifiers - Arrays, Thyristorer - SCR'er - Moduler, Dioder - Bridge Rectifiers and Transistorer - Bipolar (BJT) - Arrays ...
- Konkurrencefordel:
- Vi er specialiserede i Vishay Semiconductor Diodes Division FESB16DT-E3/81 elektroniske komponenter. FESB16DT-E3/81 kan sendes inden for 24 timer efter bestilling. Hvis du har krav til FESB16DT-E3/81, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
FESB16DT-E3/81 Produktegenskaber
Varenummer :
FESB16DT-E3/81
Fabrikant :
Vishay Semiconductor Diodes Division
Beskrivelse :
DIODE GEN PURP 200V 16A TO263AB
Serie :
-
Del Status :
Active
Diodetype :
Standard
Spænding - DC-omvendt (Vr) (Max) :
200V
Nuværende - Gennemsnitlig Rectified (Io) :
16A
Spænding - Videresend (Vf) (Max) @ Hvis :
975mV @ 16A
Hastighed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
35ns
Nuværende - Reverse Lækage @ Vr :
10µA @ 200V
Kapacitans @ Vr, F :
175pF @ 4V, 1MHz
Monteringstype :
Surface Mount
Pakke / tilfælde :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Leverandør Device Package :
TO-263AB
Driftstemperatur - Junction :
-65°C ~ 150°C
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