Vishay Semiconductor Diodes Division - 1N4448W-HE3-18

KEY Part #: K6439937

1N4448W-HE3-18 Prissætning (USD) [2422835stk Lager]

  • 1 pcs$0.01527
  • 10,000 pcs$0.01412

Varenummer:
1N4448W-HE3-18
Fabrikant:
Vishay Semiconductor Diodes Division
Detaljeret beskrivelse:
DIODE GEN PURP 75V 150MA SOD123. Diodes - General Purpose, Power, Switching 100 Volt 500mA 4ns
Producentens standard ledetid:
På lager
Opbevaringstid:
Et år
Chip fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåde:
Familiekategorier:
KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Thyristorer - DIAC'er, SIDAC'er, Transistorer - Programmerbar Unijunction, Dioder - Zener - Arrays, Transistorer - Bipolar (BJT) - Single, Pre-Biased, Dioder - Bridge Rectifiers, Power Driver Modules, Transistorer - IGBT'er - Single and Thyristorer - SCR'er - Moduler ...
Konkurrencefordel:
Vi er specialiserede i Vishay Semiconductor Diodes Division 1N4448W-HE3-18 elektroniske komponenter. 1N4448W-HE3-18 kan sendes inden for 24 timer efter bestilling. Hvis du har krav til 1N4448W-HE3-18, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N4448W-HE3-18 Produktegenskaber

Varenummer : 1N4448W-HE3-18
Fabrikant : Vishay Semiconductor Diodes Division
Beskrivelse : DIODE GEN PURP 75V 150MA SOD123
Serie : Automotive, AEC-Q101
Del Status : Active
Diodetype : Standard
Spænding - DC-omvendt (Vr) (Max) : 75V
Nuværende - Gennemsnitlig Rectified (Io) : 150mA
Spænding - Videresend (Vf) (Max) @ Hvis : 720mV @ 5mA
Hastighed : Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) : 4ns
Nuværende - Reverse Lækage @ Vr : 5µA @ 75V
Kapacitans @ Vr, F : -
Monteringstype : Surface Mount
Pakke / tilfælde : SOD-123
Leverandør Device Package : SOD-123
Driftstemperatur - Junction : -55°C ~ 150°C

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