1N4150W-HE3-18 Prissætning (USD) [2750629stk Lager]
- 1 pcs$0.01419
- 10,000 pcs$0.01412
- Varenummer:
- 1N4150W-HE3-18
- Fabrikant:
- Vishay Semiconductor Diodes Division
- Detaljeret beskrivelse:
- DIODE GEN PURP 50V 200MA SOD123. Diodes - General Purpose, Power, Switching 50 Volt 500mA 4ns
- Producentens standard ledetid:
- På lager
- Opbevaringstid:
- Et år
- Chip fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåde:
- Familiekategorier:
- KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Transistorer - Bipolar (BJT) - Arrays, Thyristorer - SCR'er - Moduler, Dioder - Rectifiers - Arrays, Transistorer - Programmerbar Unijunction, Transistorer - JFET'er, Transistorer - Bipolar (BJT) - RF, Dioder - Bridge Rectifiers and Transistorer - IGBT'er - Moduler ...
- Konkurrencefordel:
- Vi er specialiserede i Vishay Semiconductor Diodes Division 1N4150W-HE3-18 elektroniske komponenter. 1N4150W-HE3-18 kan sendes inden for 24 timer efter bestilling. Hvis du har krav til 1N4150W-HE3-18, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
1N4150W-HE3-18 Produktegenskaber
Varenummer :
1N4150W-HE3-18
Fabrikant :
Vishay Semiconductor Diodes Division
Beskrivelse :
DIODE GEN PURP 50V 200MA SOD123
Serie :
-
Del Status :
Active
Diodetype :
Standard
Spænding - DC-omvendt (Vr) (Max) :
50V
Nuværende - Gennemsnitlig Rectified (Io) :
200mA
Spænding - Videresend (Vf) (Max) @ Hvis :
1V @ 200mA
Hastighed :
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) :
4ns
Nuværende - Reverse Lækage @ Vr :
100nA @ 50V
Kapacitans @ Vr, F :
2.5pF @ 0V, 1MHz
Monteringstype :
Surface Mount
Pakke / tilfælde :
SOD-123
Leverandør Device Package :
SOD-123
Driftstemperatur - Junction :
-55°C ~ 150°C
Seneste nyt
Du kan også være interesseret i
-
BAS19
ON Semiconductor
DIODE GEN PURP 120V 200MA SOT23. Diodes - General Purpose, Power, Switching 120V 200mA
-
MMBD4448
ON Semiconductor
DIODE GEN PURP 75V 200MA SOT23-3. Diodes - General Purpose, Power, Switching Hi Conductance Fast
-
MMBD1501A
ON Semiconductor
DIODE GEN PURP 200V 200MA SOT23. Diodes - General Purpose, Power, Switching High Voltage General Purpose
-
BAS29
ON Semiconductor
DIODE GEN PURP 120V 200MA SOT23. Diodes - General Purpose, Power, Switching 120V 200mA
-
BAV20W-E3-18
Vishay Semiconductor Diodes Division
DIODE GEN PURP 150V 250MA SOD123. Diodes - General Purpose, Power, Switching 200V 625mA 1A IFSM
-
1N4148W-HE3-18
Vishay Semiconductor Diodes Division
DIODE GEN PURP 75V 150MA SOD123. Diodes - General Purpose, Power, Switching 100 Volt 500mA 4ns
Varme dele
- MBR1645-10HE3/45
- D251K12BXPSA1
- JTXM19500/469-05
- UF1503S-B
- SB05-05C-M-TB-E
- LS412060
- FR204TA
- JANTX1N6661US
- RGP10K-M3/73
- GP10G-4004E-M3/73
- RU 3AM
- RF 1A
- SD24145
- JANTXV1N5802
- MBRB1050HE3/45
- HER604-TP
- SS1H10HE3/61T
- S5MHE3/57T
- ESH2PD-E3/84A
- SS8PH9HM3/87A
- SS2P3-E3/85A
- SS1H10HE3/5AT
- SS19-E3/5AT
- GP30KHE3/54
- GP20B-E3/54
- EGP20DHE3/73
- STPS1545R
- STTH3002G
- LSM345JE3
- ES2A-TP
- VS-HFA16TB120PBF
- VS-1N5819
- 241NQ045R
- 1N6630
- RL103-AP
- ER303-AP
- RO 2CV1
- RU 3AV1
- S10MC M6G
- ES3A M6G