IMBD4448-HE3-18 Prissætning (USD) [2381497stk Lager]
- 1 pcs$0.01639
- 10,000 pcs$0.01631
- Varenummer:
- IMBD4448-HE3-18
- Fabrikant:
- Vishay Semiconductor Diodes Division
- Detaljeret beskrivelse:
- DIODE GEN PURP 75V 150MA SOT23. Diodes - General Purpose, Power, Switching 750V 150mA 4ns 500mA IFSM
- Producentens standard ledetid:
- På lager
- Opbevaringstid:
- Et år
- Chip fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåde:
- Familiekategorier:
- KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Thyristorer - DIAC'er, SIDAC'er, Transistorer - Bipolar (BJT) - Single, Dioder - Zener - Arrays, Transistorer - IGBT'er - Arrays, Transistorer - Bipolar (BJT) - Arrays, Transistorer - IGBT'er - Single, Power Driver Modules and Transistorer - Bipolar (BJT) - RF ...
- Konkurrencefordel:
- Vi er specialiserede i Vishay Semiconductor Diodes Division IMBD4448-HE3-18 elektroniske komponenter. IMBD4448-HE3-18 kan sendes inden for 24 timer efter bestilling. Hvis du har krav til IMBD4448-HE3-18, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
IMBD4448-HE3-18 Produktegenskaber
Varenummer :
IMBD4448-HE3-18
Fabrikant :
Vishay Semiconductor Diodes Division
Beskrivelse :
DIODE GEN PURP 75V 150MA SOT23
Serie :
Automotive, AEC-Q101
Del Status :
Active
Diodetype :
Standard
Spænding - DC-omvendt (Vr) (Max) :
75V
Nuværende - Gennemsnitlig Rectified (Io) :
150mA
Spænding - Videresend (Vf) (Max) @ Hvis :
1V @ 10mA
Hastighed :
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) :
4ns
Nuværende - Reverse Lækage @ Vr :
2.5µA @ 70V
Kapacitans @ Vr, F :
-
Monteringstype :
Surface Mount
Pakke / tilfælde :
TO-236-3, SC-59, SOT-23-3
Leverandør Device Package :
SOT-23
Driftstemperatur - Junction :
150°C (Max)
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