Beskrivelse :
GANFET TRANS 100V 6A BUMPED DIE
Teknologi :
GaNFET (Gallium Nitride)
Afløb til Source Voltage (VDSS) :
100V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
6A (Ta)
Drevspænding (Maks. Rds On, Min Rds On) :
5V
Rds On (Max) @ Id, Vgs :
30 mOhm @ 6A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs :
2.2nC @ 5V
Inputkapacitans (Ciss) (Max) @ Vds :
220pF @ 50V
Power Dissipation (Max) :
-
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandør Device Package :
Die Outline (5-Solder Bar)