NS8ATHE3_A/P Prissætning (USD) [3176stk Lager]
- 1,000 pcs$0.26162
- Varenummer:
- NS8ATHE3_A/P
- Fabrikant:
- Vishay Semiconductor Diodes Division
- Detaljeret beskrivelse:
- DIODE GEN PURP 50V 8A TO220AC.
- Producentens standard ledetid:
- På lager
- Opbevaringstid:
- Et år
- Chip fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåde:
- Familiekategorier:
- KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Thyristorer - SCR'er - Moduler, Transistorer - IGBT'er - Arrays, Transistorer - Bipolar (BJT) - Single, Transistorer - Særligt formål, Transistorer - Bipolar (BJT) - Arrays, Pre-Biased, Dioder - Bridge Rectifiers, Transistorer - IGBT'er - Moduler and Transistorer - Bipolar (BJT) - Arrays ...
- Konkurrencefordel:
- Vi er specialiserede i Vishay Semiconductor Diodes Division NS8ATHE3_A/P elektroniske komponenter. NS8ATHE3_A/P kan sendes inden for 24 timer efter bestilling. Hvis du har krav til NS8ATHE3_A/P, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
NS8ATHE3_A/P Produktegenskaber
Varenummer :
NS8ATHE3_A/P
Fabrikant :
Vishay Semiconductor Diodes Division
Beskrivelse :
DIODE GEN PURP 50V 8A TO220AC
Serie :
Automotive, AEC-Q101
Del Status :
Obsolete
Diodetype :
Standard
Spænding - DC-omvendt (Vr) (Max) :
50V
Nuværende - Gennemsnitlig Rectified (Io) :
8A
Spænding - Videresend (Vf) (Max) @ Hvis :
1.1V @ 8A
Hastighed :
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
-
Nuværende - Reverse Lækage @ Vr :
10µA @ 50V
Kapacitans @ Vr, F :
55pF @ 4V, 1MHz
Monteringstype :
Through Hole
Pakke / tilfælde :
TO-220-2
Leverandør Device Package :
TO-220AC
Driftstemperatur - Junction :
-55°C ~ 150°C
Seneste nyt
Du kan også være interesseret i
-
RJU6052SDPD-E0#J2
Renesas Electronics America
DIODE GEN PURP 600V 20A TO252. Diodes - General Purpose, Power, Switching FRD 600V/10A/25ns Trr/TO-252
-
RJU4352SDPD-E0#J2
Renesas Electronics America
DIODE GEN PURP 430V 20A TO252. Diodes - General Purpose, Power, Switching FRD 430V/20A/23ns Trr/TO-252
-
RJU3052SDPD-E0#J2
Renesas Electronics America
DIODE GEN PURP 360V 20A TO252. Diodes - General Purpose, Power, Switching FRD 360V/20A/40ns Trr/TO-252
-
CMDD6001 BK
Central Semiconductor Corp
DIODE GEN PURP 75V 250MA SOD323. Diodes - General Purpose, Power, Switching Ultra Low Leakage 71Vr 100Vrrm 250mA
-
MBR1660-E3/45
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 60V 16A TO220AB. Schottky Diodes & Rectifiers 16 Amp 60Volt Single
-
Varme dele
- S1J-TP
- S9147D
- SF10DG-B
- RGP10G-6038M3/73
- 1N4005-N-0-3-AP
- R7004203XXUA
- VS-1EFH02W-M3-18
- 1N3297R
- SS5P9HM3/86A
- UES2604
- EGP10AHM3/73
- EGP10A
- S4240F
- R9G20609CSOO
- 1N3909R
- 1N5622GP-E3/54
- SR502-T-F
- BYD13GGP-E3/73
- DGS17-03CS
- VF20100SG-E3/45
- SD103BW-13-F
- FESE16DT-E3/45
- JANTX1N6623
- MR756G
- RS2K-13
- 181NQ045R
- 50WQ10FN
- VS-11DQ04TR
- BAS21TA
- SS36HE3_A/I
- MBRS1100T3H
- BAT43-L0 A0G
- IDW30E60AFKSA1
- STPSC10H065G-TR
- RM 11CV
- NRVS3GB
- GP10JE-E3/73
- GL41J-E3/97
- BY206GP-E3/54
- LS101C-GS18