Varenummer :
TPN4R712MD,L1Q
Fabrikant :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET P-CH 20V 36A 8TSON ADV
Teknologi :
MOSFET (Metal Oxide)
Afløb til Source Voltage (VDSS) :
20V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
36A (Tc)
Drevspænding (Maks. Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
4.7 mOhm @ 18A, 4.5V
Vgs (th) (Max) @ Id :
1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
65nC @ 5V
Inputkapacitans (Ciss) (Max) @ Vds :
4300pF @ 10V
Power Dissipation (Max) :
42W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Surface Mount
Leverandør Device Package :
8-TSON Advance (3.3x3.3)
Pakke / tilfælde :
8-PowerVDFN